2003. 2. 25 1/2 semiconductor technical data KTA1520S epitaxial planar pnp transistor revision no : 1 high voltage application. maximum rating (ta=25 ) dim millimeters 1. emitter 2. base 3. collector sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.45+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ electrical characteristics (ta=25 ) characteristic symbol rating unit collector-base voltage v cbo -120 v collector-emitter voltage v ceo -100 v emitter-base voltage v ebo -5 v collector current dc i c -1 a pulse * i cp -2 base current i b -200 ma collector power dissipation p c 150 mw junction temperature t j 150 storage temperature range t stg -55 150 type name marking lot no. kmh * pulse width = 300 s, duty cycle 2%. characteristic symbol test condition min. typ. max. unit collector-base breakdown voltage v (br)cbo i c =-100 a -120 - - v collector-emitter breakdown voltage v (br)ceo i c =-10ma -100 - - v emitter-base breakdown voltage v (br)ebo i e =-100 a -5 - - v collector cut-off current i cbo v cb =-100v - - -100 na emitter cut-off current i ebo v eb =-4v - - -100 na collector-emitter cut-off current i ces v ces =-100v - - -100 na collector-emitter saturation voltage ** v ce(sat) (1) i c =-250ma, i b =-25ma - - -0.2 v v ce(sat) (2) i c =-500ma, i b =-50ma - - -0.3 base-emitter saturation voltage ** v be(sat) i c =-500ma, i b =-50ma - - -1.1 v base-emitter voltag v be v ce =-5v, i c =-1ma - - -1.0 v dc current gain ** h fe (1) v ce =-5v, i c =-1ma 100 - - h fe (2) v ce =-5v, i c =-250ma 100 - - h fe (3) v ce =-5v, i c =-500ma 100 - 300 h fe (4) v ce =-5v, i c =-1a 50 - - transition frequency f t v ce =-10v, i c =-50ma, f=100mhz 50 - - mhz collector output capacitance c ob v cb =-10v, f=1mhz - - 5 pf ** pulse width = 300 s, duty cycle 2%.
2003. 2. 25 2/2 KTA1520S revision no : 1 0 voltage v (v) ce(sat) -0.01 -0.001 collector current i (a) c v - i ce(sat) c v - i ce(sat) c collector-emitter saturation voltage v (v) ce(sat) collector-emitter saturation -0.1 -1 -0.1 -0.2 -0.3 -0.4 i /i =10 cb i /i =10 c b i /i =50 c b collector current i (a) c ta=-25 c 0 -0.01 -0.001 -0.1 -1 -0.1 -0.2 -0.3 -0.4 ta=-55 c ta=25 c ta=100 c -0.8 -0.6 -0.4 -0.3 -0.1 -0.03 -0.01 c be(sat) v - i c collector current i (a) -0.001 -0.003 -1 -3 -1.0 -1.2 be(sat) base-emitter saturation voltage v (v) b c i /i =10 ta=100 c cbe i - v c collector current i (a) be base-emitter voltage v (v) ce v =-5v ta=25 c 0 400 300 200 -0.3 -0.1 -0.03 -0.01 -0.001 -0.003 -1 -3 100 ce v =-5v ta=100 c dc current gain h fe collector current i (ma) c h - i fe c ta=25 c ta=-55 c ta=25 c ta=-55 c ta=-55 c ta=100 c -0.1 -0.01 -0.001 -0.3 -0.03 -0.003 -1.2 -1.0 -0.6 -0.8 -0.4 -0.2 -3 -1
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